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| New Product TN0200K Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) 20 0.5 at VGS = 2.5 V 0.65 rDS(on) () 0.4 at VGS = 4.5 V ID (A) 0.73 FEATURES * TrenchFET(R) Power MOSFET * ESD Protected: 4000 V RoHS COMPLIANT APPLICATIONS * Direct Logic-Level Interface: TTL/CMOS * Drivers: Relays, Solenoids, Lamps, Hammers * Battery Operated Systems, DC/DC Converters * Solid-State Relays * Load/Power Switching-Cell Phones, Pagers TO-236 (SOT-23) Marking Code: K2ywl 3 S 2 D K2 = Part Number Code for TN0200K y = Year Code w = Week Code l = Lot Traceability Top View G D G 1 100 Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)b Pulsed Drain Current a Symbol VDS VGS TA = 25 C TA = 70 C ID IDM IS TA = 25 C TA = 70 C PD TJ, Tstg Limit 20 8 0.73 0.58 4 0.3 0.35 0.22 - 55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b Symbol RthJA Limit 357 Unit C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 10 sec. Document Number: 72678 S-71198-Rev. B, 18-Jun-07 www.vishay.com 1 New Product TN0200K Vishay Siliconix SPECIFICATIONS TA = 25 C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 16 ID 0.6 A, VGEN = 4.5 V Rg = 6 VGS = 0 V, ID = 10 A VDS = VGS, ID = 50 A VDS = 0 V, VGS = 4.5 V VDS = 20 V, VGS = 0 V TJ = 55 C VDS 5 V, VGS = 4.5 V VDS 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 0.6 A VGS = 2.5 V, ID = 0.6 A VDS = 5 V, ID = 0.6 A IS = 0.3 A, VGS = 0 V 2.5 1.5 0.2 0.25 2.2 0.8 1.2 0.4 0.5 20 0.45 0.6 1.0 5 0.1 10 A S V A V Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall TIme Voltagea 1400 VDS = 10 V, VGS = 4.5 V ID = 0.6 A 190 300 105 17 20 55 30 2000 pC 25 30 85 45 ns Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4.0 VGS = 5 thru 2.5 V 3.2 3 I D - Drain Current (A) 2.4 I D - Drain Current (A) 2V 25 C 4 TJ = - 55 C 2 125 C 1.6 1.5 V 0.8 1V 0.0 0.0 0.4 0.8 1.2 1.6 2.0 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72678 S-71198-Rev. B, 18-Jun-07 New Product TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 200 175 r DS(on) - On-Resistance () C - Capacitance (pF) 0.8 150 125 100 75 50 Crss 25 0.0 0 1 2 3 4 5 6 7 0 0 4 8 12 16 20 Coss Ciss 0.6 0.4 VGS = 2.5 V VGS = 4.5 V 0.2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.6 A 4 rDS(on) - On-Resiistance (Normalized) 1.5 1.7 Capacitance VGS = 4.5 V ID = 0.6 A 1.3 3 2 1.1 1 0.9 0 0.0 0.3 0.6 0.9 1.2 1.5 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 5 TJ = 150 C r DS(on) - On-Resistance () 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Junction Temperature 1 I S - Source Current (A) ID = 0.6 A 0.1 TJ = 25 C 0.01 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage Document Number: 72678 S-71198-Rev. B, 18-Jun-07 www.vishay.com 3 New Product TN0200K Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.2 100000 10000 0.1 V GS(th) Variance (V) ID = 50 A - 0.0 I GSS - Gate Current (A) 1000 100 10 1 0.1 0.01 - 0.4 - 50 0.001 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) 0 4 2 6 8 VGS - Gate-to-Source Voltage (V) 10 TJ = 25 C TJ = 150 C - 0.1 - 0.2 - 0.3 Threshold Voltage 5 10 Gate Current vs. Gate-Source Voltage IDM Limited *r DS(on) Limited 1 1 ms 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s dc I D - Drain Current (A) 4 Power (W) 3 2 1 0.01 TA = 25 C Single Pulse BVDSS Limited 0 0.01 0.1 1 Time (sec) 10 100 600 0.001 0.1 *VGS Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72678. www.vishay.com 4 Document Number: 72678 S-71198-Rev. B, 18-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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